今天分享另一篇网上流传很广的22nm 平面 process flow. 有兴趣的可以与上一篇22nm gate last FinFET process flow 进行对比学习。 言归正传，接下来介绍平面工艺最后一个节点22nm process flow。 Pad Oxide Growth 首先是P型衬底上面有一层外延生长的Si，然后再生长一层Pad Oxide。

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The view today from a window at Beijing Minzu Hotel on Chang'an Avenue is dramatically different, Sept 22, 2018. [Photo by Kang Tianpeng/provided to chinadaily.com.cn] ...