For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

Sponsored by: Texas Instruments Even though gallium-nitride transistors are becoming a more popular solution in terms of power switching, the venerable MOSFET still can be used effectively in current ...

Epi RP Centura(R) Targets Selective Epi Applications for Sub-90nm High-Speed Transistors Applied Materials, Inc. (Nasdaq:AMAT) introduces its 300mm Epi RP Centura(R) system, the industry's only system ...