A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...

After a long period during which the emphasis had been on building ever-faster computer circuits, things have shifted toward making them more energy-efficient. Some efficiency gains have come through ...

Researchers demonstrate “a low-voltage organic ternary logic circuit, in which the organic HTR was vertically integrated with the organic nonvolatile flash memory.” “Multi-valued logic (MVL) circuits ...

Just as its name implies, a floating-gate transistor’s driving terminal is electrically isolated from the rest of the device—that is, floating—so there is no direct internal dc path from the input ...

OFET incorporating the CdSe quantum dot film used in this study. (Courtesy: J Jang) Photoresponsive flash memories made from organic field-effect transistors (OFETs) that can be quickly erased using ...

The speed record for programming organic transistor memory has been shattered. Work is needed on the stability of the memory storage, but it's a promising step towards some novel technological ...

Many applications need to archive data or retain system information after power-down. These tasks fall to nonvolatile memory that must be in-circuit writable at least once, and often many times.

NAND flash memory is among the key components used in today's popular consumer technology products. The birth of NAND flash could be credited to two Bell Labs researchers who fabricated the world's ...