Figure 1: Current-induced magnetization switching and second harmonic measurements in the Al 2 O 3 (20 nm)/Cr-TI(7 nm)/GaAs(substrate) structure device. Figure 2: Top-gate Hall bar configuration and ...

Scientists have developed a versatile platform with an electrically controlled nano-gate that can be used for applications in sensing, chemical synthesis, memristors, and neuromorphic computing. The ...