Ultra-heat resistant computer storage can operate at Venus-like temperatures and may be used in extreme conditions such as nuclear plants and even for future NASA missions. When you purchase through ...
Phase separation, when molecules part like oil and water, works alongside oxygen diffusion to help memristors -- electrical components that store information using electrical resistance -- retain ...
TAICHUNG, Taiwan, March 15, 2023 /PRNewswire/ -- Winbond Electronics Corporation, a leading global supplier of semiconductor memory solutions, and STMicroelectronics (STM), a global semiconductor ...
Materials with high magnetoelectric coupling could be useful in novel devices such as magnetic computer memories, chemical sensors and quantum computers. When researchers irradiate a thin layer of ...
A sheet of graphene sandwiched between electrolytes can host independently tunable proton and electron currents — setting the stage for a device that serves both computer-memory and logic functions.
What steps can engineers take to enhance computer chips? This is what a recent study published in Nature hopes to address as an international team of researchers led by the Massachusetts Institute of ...
Electronic devices power everyday life, from smartphones to medical sensors. Yet, as these gadgets grow in number, so does the mounting challenge of electronic waste, or e-waste. Physically transient ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling (1) new Universal Flash Storage (2) (UFS) Ver. 4.1 embedded memory devices ...
With transistors and logic gates as our basic building blocks, we can begin to construct the actual circuits that make up computer memory. One of the simplest memory circuits is the AND gate, which ...
Fungal networks may be a promising alternative to tiny metal devices used in processing and storing digital memories and other computer data, according to a new study. Mushrooms have long been ...
The stability of (Al,Sc)N films, with minimal changes in values suggests their suitability for next-generation ferroelectric memory devices. In a study published in the journal Applied Physics Letters ...