NXP has launched its latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor for L-band radar applications delivering RF output power of 500W at frequencies between 1.2GHz and 1.4GHz.

Over the years, tutorials have appeared in EMC journals explaining how to estimate the power required from a power amplifier intended for use in an RF immunity test system. Little material, if any, ...

Freescale Semiconductor has introduced an RF power LDMOS transistor that combines the industry’s highest output power and efficiency with the greatest ruggedness of any competitive device in its class ...

With 14 envelope-tracking-enabled handsets now on the market, and more sets to follow in the coming years, envelope tracking (ET) has been firmly accepted as the industry standard for the architecture ...