Oblivious Random Access Memory (ORAM) represents a groundbreaking cryptographic technique designed to obscure data access patterns, thereby protecting sensitive information from potential adversaries.

RAM consists of a grid of memory cells, each capable of storing a small amount of data, typically one bit (binary digit) or a few bits. These cells are organized into rows and columns, forming a ...

Embedded Dynamic Random Access Memory (eDRAM) design is rapidly evolving to meet the escalating performance and energy efficiency demands of contemporary processors. This technology has emerged as a ...

Coughlin Associates and Objective Analysis released their 2024 report on emerging non-volatile memories, A Deep Look at New Memories. These memories include magnetic random access memory, MRAM; ...

BEIJING, Dec. 26, 2024 /PRNewswire/ -- WiMi Hologram Cloud Inc. (WIMI) ("WiMi" or the "Company"), a leading global Hologram Augmented Reality ("AR") Technology provider, today announced the ...

A prototype MCU test chip with a 10.8 Mbit magnetoresistive random-access memory (MRAM) memory cell array—fabricated on a 22-nm embedded MRAM process—claims to accomplish a random read access ...

A major breakthrough in the field of computer memory has just been achieved by Japanese researchers. They have developed a new universal memory technology, surpassing current computer modules in speed ...

A new technical paper titled “Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model” was published by researchers at Georgia Tech, imec and National Technical University ...